HGTP12N60A4D دیتاشیت

HGTP12N60A4D

مشخصات دیتاشیت

نام دیتاشیت HGTP12N60A4D
حجم فایل 75.536 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت HGTP12N60A4D

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سایر مستندات

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS 12 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi HGT1S12N60A4DS
  • Package: TO-263
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Not For New Designs
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 17ns/96ns
  • Test Condition: 390V, 12A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Base Part Number: HGT1S12
  • detail: IGBT 600V 54A 167W Surface Mount TO-263AB

محصولات مشابه